Revamping the Semiconductor Industry with Hybrid Bonding
Article / EE Times / September 20, 2024
By Laura Mirkarimi
Hybrid Bonding, also known as direct-bond interconnect (DBI®), is poised to transform a semiconductor industry wrestling with Moore’s Law slowing as market demands for ubiquitous access to more data rise.
Recent Advances and Trends in Cu-Cu Hybrid Bonding
Research Paper / IEEE / March 11, 2023
By John H. Lau
Recent advances and trends in Cu-Cu hybrid bonding are investigated. Emphasis is placed on the definition, kinds, advantages and disadvantages, challenges (opportunities), and examples of Cu-Cu bump-less hybrid bonding.
Die-to-Wafer Hybrid Bonding for Chiplet and Heterogeneous Integration: Die Size Effects Evaluation-Small Die Applications
Research Paper / IEEE ECTC / June 4, 2022
By G. Gao, L. Mirkarimi, G Fountain, D. Suwito, J. Theil, T. Workman, C. Uzoh, B. Lee, KM Bang, and G. Guevara
The Direct Bond Interconnect (DBI®) Ultra technology, a die-to-wafer (D2W) and die-to-die (D2D) hybrid bonding platform, offers a hermetically sealed solid Cu-Cu interconnect through room temperature bonding and low temperature anneal. The value of DBI® Ultra can be realized in diverse products ranging from very small die to reticle-size large die in applications such as RF, sensors, microcontrollers, GPUs, and FPGAs.
The Influence of Cu Microstructure on Thermal Budget in Hybrid Bonding
Research Paper / IEEE ECTC / May 6, 2022
By L. Mirkarimi, C. Uzoh, D. Suwito, G. Fountain, T. Workman, B. Lee, J. Theil, and G. Gao
In this paper we examine the influence of microstructural engineering of the Cu pad on the thermal budget required to obtain strong metallurgical Cu-Cu bonds, producing reductions in final anneal temperature.
Analysis of Die Edge Bond Pads in Hybrid Bonded Multi-Die Stacks
Research Paper / IEEE / May 1, 2022
By J. A. Theil, T. Workman, D. Suwito, L. Mirkarimi, G. Fountain, KM Bang, G. Gao, B. Lee, P. Mrozek, C. Uzoh, M. Huynh, and O. Zhao
Hybrid bond pad performance was studied based on proximity to the die edge for both single and multi-die configurations to establish design guidelines and understand the processing and layout effects.
HVM CMP Process Development for Advanced Direct Bond Interconnect (DBI®)
Research Paper / International Conference on Planarization Technologies / January 6, 2022
By C. Rudolph, H. Wachsmuth, P. Gansauer, T. Werner, M. Junhaehnel, G. Fountain, J. Theil, and L. Mirkarimi
Learn about chemical mechanical polishing (CMP), a crucial preparation step for successful wafer-to-wafer hybrid bonding, enabling rapid adoption of hybrid bonding in high-volume manufacturing (HVM).
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